Spectroscopic ellipsometry characterization of strained and relaxed Si1−xGexepitaxial layers
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.353896
Reference32 articles.
1. Heterojunction bipolar transistors using Si-Ge alloys
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3. Si1−xGex/Si multiple quantum well infrared detector
4. Growth interfaces of Si1−xGex/Si heterostructures studied by in situ laser light scattering
5. Variable angle of incidence spectroscopic ellipsometry: Application to GaAs‐AlxGa1−xAs multiple heterostructures
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