Monte Carlo Simulation of Heteroepitaxial Growth of Ge on Pit-patterned Si(100) Substrate and Parallelization of Calculations-Reference-Cited by-同舟云学术

Monte Carlo Simulation of Heteroepitaxial Growth of Ge on Pit-patterned Si(100) Substrate and Parallelization of Calculations

Published:2023-12-17 Issue:1 Volume:18 Page:16-28
ISSN:1998-6920
Container-title:The Herald of the Siberian State University of Telecommunications and Information Science
language:
Short-container-title:jour

Author:

Rudin S. A.¹^ORCID,Pavsky K. V.²,Revun A. L.²^ORCID,Dvurechenskii A. V.³^ORCID

Affiliation:

1. Rzhanov Institute of Semiconductor Physics (ISP SB RAS)

2. Rzhanov Institute of Semiconductor Physics (ISP SB RAS); Siberian State University of Telecommunications and Information Science (SibSUTIS)

3. Rzhanov Institute of Semiconductor Physics (ISP SB RAS); Novosibirsk State University (NSU)

Abstract

Methods and algorithms of Monte Carlo simulation of heteroepitaxial growth of Ge on Si are considered. The computational complexity analysis of simulation program blocks is carried out. Parallelization of time-consuming cycles using directives of the open standard OpenMP is proposed. The Monte Carlo simulation of heteroepitaxial growth of Ge on pitpatterned Si substrate was carried out. The position of Ge nanoislands is determined by the competition between the nucleation process of three-dimensional islands due to the accumulation of elastic strain in the growing layer and the process of diffusion of Ge atoms into the pits serving as a drain.

Publisher

Siberian State University of Telecommunications and Informatics

Reference22 articles.

1. Shmidt O. G. and Eberl K. Self-assembled Ge/Si dots for faster field-effect transistors. IEEE Trans. El. Dev, 2001, vol. 48, iss. 6, p. 1175.

2. Stangl J., Holy V., and Bauer G. Structural properties of self-organized semiconductor nanostructures. Rev. Mod. Phys., 2004, vol. 76, p. 725.

3. Tsybeskov L. and Lockwood D. J. Silicon-Germanium Nanostructures for Light Emitters and On-Chip Optical Interconnects. Proc. IEEE, 2009, vol. 76, iss. 7, p. 1284.

4. Eaglesham D. J. and Cerullo M. Dislocation-free Stranski-Krastanow growth of Ge on Si(100). Phys. Rev. Lett., 1990. vol. 64, p. 1943.

5. Mo Y.-W., Savage D. E., Swartzentruber B. S., and Lagally M. G. Kinetic pathway in StranskiKrastanov growth of Ge on Si(001). Phys. Rev. Lett., 1990, vol. 65, p. 1020.