Optimization of the Structural Properties and Surface Morphology of a Convex-Graded In x Al1–xAs (x = 0.05–0.83) Metamorphic Buffer Layer Grown via MBE on GaAs (001)-Reference-Cited by-同舟云学术

Optimization of the Structural Properties and Surface Morphology of a Convex-Graded In x Al1–xAs (x = 0.05–0.83) Metamorphic Buffer Layer Grown via MBE on GaAs (001)

Published:2018-01 Issue:1 Volume:52 Page:120-125
ISSN:1063-7826
Container-title:Semiconductors
language:en
Short-container-title:Semiconductors

Author:

Solov’ev V. A.,Chernov M. Yu.,Sitnikova A. A.,Brunkov P. N.,Meltser B. Ya.,Ivanov S. V.

Publisher

Pleiades Publishing Ltd

Subject

Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/article/10.1134/S1063782618010232/fulltext.html

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4. S. V. Sorokin, G. V. Klimko, I. V. Sedova, A. A. Sitnikova, D. A. Kirilenko, M. V. Baidakova, M. A. Yagovkina, T. A. Komissarova, K. G. Belyaev, and S. V. Ivanov, J. Cryst. Growth 455, 83 (2016).

5. V. A. Solov’ev, M. Yu. Chernov, B. Ya. Mel’tser, A. N. Semenov, Ya. V. Terent’ev, D. D. Firsov, O. S. Komkov, and S. V. Ivanov, Tech. Phys. Lett. 42, 1038 (2016).

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