Metamorphic InAs(Sb)/InGaAs/InAlAs nanoheterostructures grown on GaAs for efficient mid-IR emitters-Reference-Cited by-同舟云学术

Metamorphic InAs(Sb)/InGaAs/InAlAs nanoheterostructures grown on GaAs for efficient mid-IR emitters

Published:2019-02 Issue:1 Volume:65 Page:20-35
ISSN:0960-8974
Container-title:Progress in Crystal Growth and Characterization of Materials
language:en
Short-container-title:Progress in Crystal Growth and Characterization of Materials

Author:

Ivanov S.V.,Chernov M.Yu.,Solov'ev V.A.,Brunkov P.N.,Firsov D.D.,Komkov O.S.

Funder

Russian Foundation for Basic Research

Publisher

Elsevier BV

Subject

Condensed Matter Physics,General Materials Science

Reference91 articles.

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3. Low threshold room-temperature continuous-wave operation of 2.24–3.04 μm GaInAsSb/AlGaAsSb quantum-well lasers;Lin;Appl. Phys. Lett.,2004

4. Design of high-power room-temperature continuous-wave GaSb-based type-I quantum-well lasers with λ>2.5 μm;Shterengas;Semicond. Sci. Technol.,2004

5. Mechanism of the temperature sensivity of mid-infrared GaSb-based semiconductor lasers;Suchalkin;Appl. Phys. Lett.,2005

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