Numerical calculation of the probability of an electronic transition in a two-barrier heterostructure by a thin nanolayer-Reference-Cited by-同舟云学术

Numerical calculation of the probability of an electronic transition in a two-barrier heterostructure by a thin nanolayer

Published:2024-04 Issue:4 Volume:97 Page:
ISSN:1434-6028
Container-title:The European Physical Journal B
language:en
Short-container-title:Eur. Phys. J. B

Author:

Baymatov Paziljon,Abdulazizov Bakhrom,Tokhirjonov Makhmudjon

Publisher

Springer Science and Business Media LLC

Link

https://link.springer.com/content/pdf/10.1140/epjb/s10051-024-00689-1.pdf

Reference20 articles.

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2. Z. Yang, H. Chun-Lin, G. Jian-Feng, Z. Zhan-Ping, W. Bao-Qiang, Z. Yi-Ping, Influence of spacer layer thickness on the current-voltage characteristics of pseudomorphic AlAs/In0. 53Ga0. 47 As/In As resonant tunnelling diodes. Chinese Phys. B. 17(4), 1472 (2008). http://www.iop.org/journals/cpbhttp://cpb.iphy.ac.cn

3. V.D. Dymnikov, O.V. Konstantinov, Fiz. Tekh. Poluprovodn. (St. Petersburg) 29, 133, (Semiconductors 29, 70 (1995). https://journals.ioffe.ru/arti cles/viewPDF/18062

4. P. Baymatov, B. Abdulazizov, M. Tokhirjonov, Electron eigenvalues in quantum well of AlAs/InxGa1−xAs/AlAs heterostructures with InAs nanoinserts Eur. Phys. J. B 96, 11 (2023). https://doi.org/10.1140/epjb/s10051-023-00586-z

5. G.B. Galiev, I.S. Vasilevskii, E.A. Klimov, A.N. Klochkov, D.V. Lavruhin, S.S. Pushkarev, P.P. Mualtsev, Specific features of the photoluminescence of HEMT nanoheterostructures containing a composite InAlAs/InGaAs/InAs/InGaAs/InAlAs quantum well. Semiconductors 49(2), 234–241 (2015). https://doi.org/10.1134/S1063782615020086