Influence of spacer layer thickness on the current-voltage characteristics of pseudomorphic AlAs/In 0.53 Ga 0.47 As/In As resonant tunnelling diodes
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy
Reference12 articles.
1. Tunneling in a finite superlattice
2. Resonant tunneling oscillations in a GaAs‐AlxGa1−xAs heterostructure at room temperature
3. Room Temperature Observation of Differential Negative Resistance in an AlAs/GaAs/AlAs Resonant Tunneling Diode
4. A Pseudomorphic In0.53Ga0.47As/AlAs Resonant Tunneling Barrier with a Peak-to-Valley Current Ratio of 14 at Room Temperature
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1. Numerical calculation of the probability of an electronic transition in a two-barrier heterostructure by a thin nanolayer;The European Physical Journal B;2024-04
2. Opto-electronic transport properties of resonant tunneling diodes with type-I and II postwells;Applied Physics Letters;2023-09-25
3. Characteristics of Resonant Tunneling in Nanostructures with Spacer Layers;Applied Sciences;2023-02-26
4. Effect of the emitter spacer level on the peak current of resonant tunneling diode;Nanotechnologies in Russia;2013-03
5. Effect of spacer layers on current-voltage characteristics of resonant-tunneling diode;Semiconductors;2010-08
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