Resonant tunneling oscillations in a GaAs‐AlxGa1−xAs heterostructure at room temperature-Reference-Cited by-同舟云学术

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Resonant tunneling oscillations in a GaAs‐AlxGa1−xAs heterostructure at room temperature

Published:1985-03 Issue:5 Volume:46 Page:508-510
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Shewchuk T. J.,Chapin P. C.,Coleman P. D.,Kopp W.,Fischer R.,Morkoç H.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.95574

Reference9 articles.

1. Tunneling in a finite superlattice

2. Resonant tunneling in semiconductor double barriers

3. Resonant tunneling through quantum wells at frequencies up to 2.5 THz

4. Inelastic tunneling characteristics of AlAs/GaAs heterojunctions

5. Multibarrier tunneling in Ga1−xAlxAs/GaAs heterostructures

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