Growth variations and scattering mechanisms in metamorphic In0.75Ga0.25As/In0.75 Al0.25As quantum wells grown by molecular beam epitaxy
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference24 articles.
1. Scattering mechanisms in undoped In0.75Ga0.25As/In0.75Al0.25As two-dimensional electron gases;Capotondi;J. Cryst. Growth,2005
2. Critical layer thickness study in In0.75Ga0.25As/In0.5Al0.5As pseudomorphic resonant tunneling diode structure grown on GaAs substrates;Gozu;J. Cryst. Growth,2001
3. Molecular beam epitaxy growth and characterization of InxGa1−xAs (0.57;Bergh;J. Cryst. Growth,1997
4. High-quality InxGa1−xAs/InAlAs modulation-doped heterostructures grown lattice-mismatched on GaAs substrates;Inoue;J. Cryst. Growth,1991
5. Strain induced effects on the transport properties of metamorphic InAlAs/InGaAs quantum wells;Capotondi;Thin Solid Films,2005
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