Effect of design and stress relaxation on structural, electronic, and luminescence properties of metamorphic InAs(Sb)/In(Ga,Al)As/GaAs mid-IR emitters with a superlattice waveguide-Reference-Cited by-同舟云学术

Effect of design and stress relaxation on structural, electronic, and luminescence properties of metamorphic InAs(Sb)/In(Ga,Al)As/GaAs mid-IR emitters with a superlattice waveguide

Published:2020-03-31 Issue:12 Volume:127 Page:125706
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Chernov M. Yu.¹^ORCID,Solov’ev V. A.¹,Komkov O. S.¹²^ORCID,Firsov D. D.²^ORCID,Andreev A. D.³,Sitnikova A. A.¹,Ivanov S. V.¹

Affiliation:

1. Ioffe Institute, 26 Politekhnicheskaya Str., St. Petersburg 194021, Russia

2. Department of Micro- and Nanoelectronics, St. Petersburg Electrotechnical University, 5 Professora Popova Str., St. Petersburg 197376, Russia

3. A-Modelling Solutions Ltd., 11 Forster Road, Guildford GU2 9AE, United Kingdom

Funder

Ministry of Education and Science of the Russian Federation

Russian Foundation for Fundamental Investigations

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.5144210

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