Possibility of Controlling the Impurity Concentration in the Near-Surface Layers of Films Grown by the ALD Method
Author:
Publisher
Pleiades Publishing Ltd
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Link
http://link.springer.com/content/pdf/10.1134/S1063739719040048.pdf
Reference27 articles.
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3. Alen, P., Juppo, M., Ritala, M., Sajavaara, T., Keinonen, J., and Leskela, M., Atomic layer deposition of Ta(Al)N(C) thin films using trimethylaluminum as a reducing agent, J. Electrochem. Soc., 2001, vol. 148, no. 10, pp. G566–G571.
4. Knoops, H.C.M., Peuter, K., and Kessels, W.M.M., Redeposition in plasma-assisted atomic layer deposition: silicon nitride film quality ruled by the gas residence time, Appl. Phys. Lett., 2015, vol. 107, p. 014102.
5. Abdulagatov, A.I., Ramazanov, Sh.M., Dallaev, R.S., Murliev, E.K., Palchaev, D.K., Rabadanov, M.Kh., and Abdulagatov, I.M., Atomic layer deposition of aluminum nitride using tris(diethylamido)aluminum and hydrazine or ammonia, Russ. Microelectron., 2018, vol. 47, no. 2, pp. 118–130.
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