Author:
Abdulagatov A. I.,Ramazanov Sh. M.,Dallaev R. S.,Murliev E. K.,Palchaev D. K.,Rabadanov M. Kh.,Abdulagatov I. M.
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference68 articles.
1. Slack, G.A., et al., The intrinsic thermal-conductivity of AlN, J. Phys. Chem. Solids, 1987, vol. 48, no. 7, pp. 641–647.
2. Goldberg, Y., Properties of Advanced Semiconductor Materials: GaN, AlN, InN, BN, SiC, SiGe, Levinshtein, M.E., Rumyantsev, S.L., and Shur, M.S., New York: Wiley, 2001.
3. Meng, W.J., Properties of Group III Nitrides, No. 11 of EMIS Datareviews Series, London: Edgar J.H., 1994.
4. Aita, C.R., Kubiak, C.J.G., and Shih, F.Y.H., Optical behavior near the fundamental absorption-edge of sputter-deposited microcrystalline aluminum nitride, J. Appl. Phys., 1989, vol. 66, no. 9, pp. 4360–4363.
5. Edwards, J. et al., Space charge conduction and electrical behaviour of aluminium nitride single crystals, Solid State Commun., 1965, vol. 3, no. 5, pp. 99–100.
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