Study of Al2O3 thin films by ALD using H2O and O3 as oxygen source for waveguide applications-Reference-Cited by-同舟云学术

Study of Al2O3 thin films by ALD using H2O and O3 as oxygen source for waveguide applications

Published:2020-11 Issue: Volume:109 Page:110370
ISSN:0925-3467
Container-title:Optical Materials
language:en
Short-container-title:Optical Materials

Author:

Caballero-Espitia D.L.,Lizarraga-Medina E.G.,Borbon-Nuñez H.A.,Contreras-Lopez O.E.,Tiznado H.,Marquez H.

Funder

DGAPA-UNAM

PAPIIT

PAPIME

FORDECyT

CONACyT

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials,Inorganic Chemistry,Organic Chemistry,Physical and Theoretical Chemistry,Spectroscopy

Reference48 articles.

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2. Electrical characterization of thin Al2O3 films grown by atomic layer deposition on silicon and various metal substrates;Groner;Thin Solid Films,2002

3. Low loss atomic layer deposited Al2O3 waveguides for applications in on-chip optical amplifiers;Demirtas;IEEE J. Sel. Top. Quant. Electron.,2018

4. Comparison between Al2O3 Thin Films Grown by ALD Using H2O or O3 as Oxidant Source;Campabadal,2011

5. Comparison of properties of an Al2O3 thin layers grown with remote O2 plasma, H2O, or O3 as oxidants in an ALD process for HfO2 gate dielectrics;Cho;J. Electrochem. Soc.,2005

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