Defect creation in amorphous-silicon thin-film transistors
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.52.4680/fulltext
Reference24 articles.
1. Creation of near-interface defects in hydrogenated amorphous silicon-silicon nitride heterojunctions: The role of hydrogen
2. Bias dependence of instability mechanisms in amorphous silicon thin‐film transistors
3. DLTS study of defect creation in amorphous-silicon thin-film transistors
4. Defect creation in the accumulation layer of a-Si: H thin-film transistors
5. Bias stress‐induced instabilities in amorphous silicon nitride/hydrogenated amorphous silicon structures: Is the ‘‘carrier‐induced defect creation’’ model correct?
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2. Nano-second timescale high-field phase transition in hydrogenated amorphous silicon;Journal of Applied Physics;2019-10-07
3. The Instability Mechanisms of Hydrogenated Amorphous Silicon Thin Film Transistors under AC Bias Stress;Japanese Journal of Applied Physics;2000-07-15
4. Saturation Measurements of Electrically Detected Magnetic Resonance in Hydrogenated Amorphous Silicon Based Thin-Film Transistors;Japanese Journal of Applied Physics;1997-01-15
5. Localized density of states in hydrogenated amorphous silicon/silicon nitride interfaces studied by transient voltage spectroscopy;Journal of Applied Physics;1996-11-15
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