Localized density of states in hydrogenated amorphous silicon/silicon nitride interfaces studied by transient voltage spectroscopy
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.363634
Reference15 articles.
1. Bias stress‐induced instabilities in amorphous silicon nitride/hydrogenated amorphous silicon structures: Is the ‘‘carrier‐induced defect creation’’ model correct?
2. Charge trapping instabilities in amorphous silicon‐silicon nitride thin‐film transistors
3. Creation of near-interface defects in hydrogenated amorphous silicon-silicon nitride heterojunctions: The role of hydrogen
4. Metastable Defects in Amorphous-Silicon Thin-Film Transistors
5. Instability mechanisms in amorphous silicon thin film transistors and the role of the defect pool
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4. Transient Behavior of the ${\hbox{a}}{\hbox{-}}{\hbox{Si}}:{\hbox{H/Si}}_{3}{\hbox{N}}_{4}$ MIS Capacitor and Its Impact on Image Quality of AMLCDs Addressed by a-Si:H Thin-Film Transistors;Journal of Display Technology;2007-03
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