Bias stress‐induced instabilities in amorphous silicon nitride/hydrogenated amorphous silicon structures: Is the ‘‘carrier‐induced defect creation’’ model correct?-Reference-Cited by-同舟云学术

Bias stress‐induced instabilities in amorphous silicon nitride/hydrogenated amorphous silicon structures: Is the ‘‘carrier‐induced defect creation’’ model correct?

Published:1990-09-17 Issue:12 Volume:57 Page:1197-1199
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Gelatos A. V.,Kanicki J.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.103484

Reference10 articles.

1. Role of hydrogen in the formation of metastable defects in hydrogenated amorphous silicon

2. Resolution of amorphous silicon thin‐film transistor instability mechanisms using ambipolar transistors

3. Assessment of lattice relaxation effects in transitions from mobility gap states in hydrogenated amorphous silicon using transient photocapacitance techniques

4. Investigation of the Silicon Nitride on Hydrogenated Amorphous Silicon Interface

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