Bias stress‐induced instabilities in amorphous silicon nitride/hydrogenated amorphous silicon structures: Is the ‘‘carrier‐induced defect creation’’ model correct?
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.103484
Reference10 articles.
1. Role of hydrogen in the formation of metastable defects in hydrogenated amorphous silicon
2. Resolution of amorphous silicon thin‐film transistor instability mechanisms using ambipolar transistors
3. Assessment of lattice relaxation effects in transitions from mobility gap states in hydrogenated amorphous silicon using transient photocapacitance techniques
4. Investigation of the Silicon Nitride on Hydrogenated Amorphous Silicon Interface
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