P‐1.5: Influence of Bandgap of SiNx Gate Insulator on the Degradation Behavior of Amorphous Silicon Thin‐Film Transistors under Reliability Test

Abstract

In this work, the stability of hydrogenated amorphous silicon (a‐Si:H) thin‐film transistors (TFTs) under reliability (RA) test was studied and a two‐stage degradation behavior during the RA test was first observed. The influence of bandgap (Eg) of the SiNx gate insulator (GI) on the degradation behavior was studied and the SiNx GI of a high Eg was found of vital importance due to its better blocking capability against electron injection from gate electrode into GI. The results in this work indicated technological impact for a‐Si:H TFTs in high‐brightness LCD products for outdoor display applications.