Effect of $\hbox{SiN}_{x}$ Gate Dielectric Deposition Power and Temperature on a-Si:H TFT Stability-Reference-Cited by-同舟云学术

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Effect of $\hbox{SiN}_{x}$ Gate Dielectric Deposition Power and Temperature on a-Si:H TFT Stability

Published:2007-07 Issue:7 Volume:28 Page:606-608
ISSN:0741-3106
Container-title:IEEE Electron Device Letters
language:
Short-container-title:IEEE Electron Device Lett.

Author:

Kattamis Alex Z.,Cherenack Kunigunde H.,Hekmatshoar Bahman,Cheng I-Chun,Gleskova Helena,Sturm James C.,Wagner Sigurd

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx5/55/4252183/04252201.pdf?arnumber=4252201

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1. P‐7.18: Effect of gate materials and stack structure on threshold voltage of ADS Pro TFT;SID Symposium Digest of Technical Papers;2024-04

2. P‐1.5: Influence of Bandgap of SiN_x Gate Insulator on the Degradation Behavior of Amorphous Silicon Thin‐Film Transistors under Reliability Test;SID Symposium Digest of Technical Papers;2024-04

3. Simultaneous Extraction of Mobility Enhancement Factor and Threshold Voltage With Parasitic Resistances in Amorphous Oxide Semiconductor Thin-Film Transistors;IEEE Transactions on Electron Devices;2023-05

4. Room-Temperature-Processed Flexible Amorphous InGaZnO Thin Film Transistor;ACS Applied Materials & Interfaces;2017-12-13

5. Bias-induced instability in an intrinsic hydrogenated amorphous silicon layer for thin-film solar cells;Materials Research Bulletin;2016-10

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