Nano-second timescale high-field phase transition in hydrogenated amorphous silicon-Reference-Cited by-同舟云学术

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Nano-second timescale high-field phase transition in hydrogenated amorphous silicon

Published:2019-10-07 Issue:13 Volume:126 Page:135706
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Sinha Rajat¹²^ORCID,Bhattacharya Prasenjit³^ORCID,Sambandan Sanjiv³⁴^ORCID,Shrivastava Mayank¹^ORCID

Affiliation:

1. Department of Electronic Systems Engineering, Indian Institute of Science, Bangalore, Karnataka 560012, India

2. Centre for Nano Science and Engineering, Indian Institute of Science, Bangalore, Karnataka 560012, India

3. Department of Instrumentation and Applied Physics, Indian Institute of Science, Bangalore, Karnataka 560012, India

4. Department of Engineering, University of Cambridge, Cambridge CB2 1TN, UK

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.5099483

Reference36 articles.

1. 12.2: A Conformable Electronic Ink Display using a Foil-Based a-Si TFT Array

2. a-Si:H Thin-Film Transistor-Driven Flexible Color E-Paper Display on Flexible Substrates

3. Low temperature a-Si:H photodiodes and flexible image sensor arrays patterned by digital lithography

4. Two-dimensional amorphous silicon image sensor arrays

5. Amorphous silicon driver circuits for organic light-emitting diode displays

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. On the ESD behavior of a-Si:H based diode-connected thin- film transistors;2022 IEEE International Conference on Emerging Electronics (ICEE);2022-12-11

2. On the ESD behavior of hydrogenated amorphous silicon based high-voltage TFTs;2022 IEEE International Conference on Emerging Electronics (ICEE);2022-12-11

3. Investigation on characteristics of millisecond solid-phase crystallized silicon films annealed by atmospheric pressure DC arc discharge micro-thermal-plasma-jet and their application to bottom-gate thin film transistors fabrication;Japanese Journal of Applied Physics;2021-09-14

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