On the ESD behavior of hydrogenated amorphous silicon based high-voltage TFTs-Reference-Cited by-同舟云学术

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On the ESD behavior of hydrogenated amorphous silicon based high-voltage TFTs

Published:2022-12-11 Issue: Volume: Page:
ISSN:
Container-title:2022 IEEE International Conference on Emerging Electronics (ICEE)
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Author:

Sinha Rajat¹,Sambandan Sanjiv²,Shrivastava Mayank³

Affiliation:

1. Indian Institute of Science,Centre for Nano Science and Engineering,Department of Electronic Systems Engineering,Bangalore,India

2. Indian Institute of Science,Department of Instrumentation and Applied Physics,Bangalore,India

3. Indian Institute of Science,Department of Electronic Systems Engineering,Bangalore,India

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/10117590/10117577/10117808.pdf?arnumber=10117808

Reference15 articles.

1. Transmission line pulsing techniques for circuit modeling of esd phenomena;maloney;Proc EOS/ESD Symp,0

2. ESD Reliability Study of a-Si:H Thin-Film Transistor Technology: Physical Insights and Technological Implications

3. Nano-second timescale high-field phase transition in hydrogenated amorphous silicon

4. Nano-second timescale drain voltage induced electrical instabilities in hydrogenated amorphous silicon thin film transistors

5. On the esd behavior of a-si.h based thin film transistors: Physical insights, design and technological implications;sinha;2018 IEEE International Reliability Physics Symposium (IRPS),2018

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