Defect creation in the accumulation layer of a-Si: H thin-film transistors-Reference-Cited by-同舟云学术

Defect creation in the accumulation layer of a-Si: H thin-film transistors

Published:1990-02 Issue:2 Volume:61 Page:251-261
ISSN:1364-2812
Container-title:Philosophical Magazine B
language:en
Short-container-title:Philosophical Magazine B

Author:

Nickel N.¹,Fuhs W.¹,Mell H.¹

Affiliation:

1. a Philipps-Universität Marburg, Fachbereich Physik und Wissenschaftliches Zentrum fur Materialwissenschaften , Renthof 5, D-3550, Marburg , F.R. Germany

Publisher

Informa UK Limited

Subject

General Physics and Astronomy,General Chemical Engineering

Link

https://www.tandfonline.com/doi/pdf/10.1080/13642819008205524

Reference21 articles.

1. Resolution of amorphous silicon thin‐film transistor instability mechanisms using ambipolar transistors

2. Single and double carrier injection in A-Si:H

3. Light‐induced dangling bonds in hydrogenated amorphous silicon

4. Dissertation;Dersch H.,1983

5. Study of surface/interface and bulk defect density in a-Si:H by means of photothermal deflection spectroscopy and photoconductivity

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