Comment on ‘‘Comprehensive analysis of Si-dopedAlxGa1−xAs (x=0to 1): Theory and experiments’’
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.36.4452/fulltext
Reference18 articles.
1. Comprehensive analysis of Si-dopedAlxGa1−xAs(x=0 to 1): Theory and experiments
2. Shallow and deep donors in direct-gapn-typeAlxGa1−xAs:Sigrown by molecular-beam epitaxy
3. Large binding due to dispersive screening and bloch function interference in many-valley semiconductors
4. Shallow-Deep Instabilities of Donor Impurity Levels and Excitons in Many-Valley Semiconductors
5. Real-space equation for single-donor impurities and core excitons in many-valley semiconductors
Cited by 4 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Point Defects: The Zero-Dimension Three-Dimensional Objects;New Horizons in Low-Dimensional Electron Systems;1992
2. Intervalley interference and lattice relaxation in DX centers;Solid State Communications;1991-05
3. Shallow and deep impurity levels in multivalley semiconductors: A Green-function study of silicon by the recursion method;Physical Review B;1989-10-15
4. Intervalley kinetic energy terms in the effective mass equation: a one-dimensional analytical study;Canadian Journal of Physics;1989-09-01
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