Intervalley interference and lattice relaxation in DX centers
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Condensed Matter Physics,General Chemistry
Reference23 articles.
1. Deep Centers in Semiconductors;Lang,1985
2. Physical origin of theDXcenter
3. Electron-paramagnetic-resonance study of the SnDXcenter in direct-gapGa0.69Al0.31As
4. DXcenter inGa1−xAlxAs alloys
5. Donors in semiconductors and metastability
Cited by 4 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Remoten‐type modulation doping of InAs quantum wells by ‘‘deep acceptors’’ in AlSb;Journal of Applied Physics;1993-06-15
2. Impurities in type-II-staggered InAs/AℓSb superlattices;Superlattices and Microstructures;1993-06
3. Vibronic levels of theEL2 center under uniaxial stress;Physical Review B;1992-12-15
4. Fano effect studied with use of the recursion method;Physical Review B;1992-10-15
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