Vibronic levels of theEL2 center under uniaxial stress
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.46.15795/fulltext
Reference48 articles.
1. Optical assessment of the main electron trap in bulk semi‐insulating GaAs
2. Intracenter transitions in the dominant deep level (EL2) in GaAs
3. Identification of the 0.82-eV Electron Trap,EL2in GaAs, as an Isolated Antisite Arsenic Defect
4. Metastability of the midgap levelEL2in GaAs: Relationship with the As antisite defect
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