Electron-paramagnetic-resonance study of the SnDXcenter in direct-gapGa0.69Al0.31As
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.40.5892/fulltext
Reference20 articles.
1. Large-Lattice-Relaxation Model for Persistent Photoconductivity in Compound Semiconductors
2. Trapping characteristics and a donor-complex (DX) model for the persistent-photoconductivity trapping center in Te-dopedAlxGa1−xAs
3. Small lattice relaxation at theDXcenter as studied by extended x‐ray absorption fine structure on Se‐doped AlGaAs
4. Sn119Mössbauer study of shallow and deep states of Sn inGa1−xAlxAs
5. Observation of the Persistent Photoconductivity Due to the DX Center in GaAs under Hydrostatic Pressure
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1. Silicon Donors at the GaAs(110) Surface: A First Principles Study;The Journal of Physical Chemistry C;2011-11-04
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