Donor levels and the microscopic structure of theDXcenter inn-type Si-dopedAlxGa0.51−xIn0.49P grown by molecular-beam epitaxy-Reference-Cited by-同舟云学术

Donor levels and the microscopic structure of theDXcenter inn-type Si-dopedAlxGa0.51−xIn0.49P grown by molecular-beam epitaxy

Published:1996-03-15 Issue:12 Volume:53 Page:7851-7862
ISSN:0163-1829
Container-title:Physical Review B
language:en
Short-container-title:Phys. Rev. B

Author:

Mäkinen J.,Laine T.,Partanen J.,Saarinen K.,Hautojärvi P.,Tappura K.,Hakkarainen T.,Asonen H.,Pessa M.,Kauppinen J. P.,Vänttinen K.,Paalanen M. A.,Likonen J.

Publisher

American Physical Society (APS)

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.53.7851/fulltext

Reference54 articles.

1. High‐power 630–640 nm GaInP/GaAlInP laser diodes

2. High-Power InGaAlP Laser Diodes for High-Density Optical Recording

3. Deep donor levels (DXcenters) in III‐V semiconductors

4. Large-Lattice-Relaxation Model for Persistent Photoconductivity in Compound Semiconductors

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