Cation and anion vacancies in proton irradiated GaInP
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1515123
Reference30 articles.
1. Annealing of the deep recombination center in GaInP/AlGaInP quantum wells grown by solid-source molecular beam epitaxy
2. Spatial distribution of radiation-induced defects in p+-n InGaP solar cells
3. Influence of deep level impurities on modulation response of InGaP light emitting diodes
4. Electron Paramagnetic Resonance of Intrinsic Defects in III-V Semiconductors
5. Minority-carrier injection-enhanced annealing of radiation damage to InGaP solar cells
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1. Space degradation of triple junction solar cells at low temperatures: II ‐electron irradiation;International Journal of Energy Research;2021-06-15
2. Experimental re-evaluation of proton penetration ranges in GaAs and InGaP;Journal of Physics D: Applied Physics;2021-01-12
3. Investigation of proton damage in III-V semiconductors by optical spectroscopy;Journal of Applied Physics;2016-06-21
4. Defect identification in semiconductors with positron annihilation: Experiment and theory;Reviews of Modern Physics;2013-11-14
5. Defect study of MOVPE-grown InGaP layers on GaAs;Journal of Crystal Growth;2004-12
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