Defect study of MOVPE-grown InGaP layers on GaAs-Reference-Cited by-同舟云学术

Defect study of MOVPE-grown InGaP layers on GaAs

Published:2004-12 Issue:1-4 Volume:272 Page:627-632
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Knauer A.,Krispin P.,Balakrishnan V.R.,Weyers M.

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference17 articles.

1. Annealing of the deep recombination center in GaInP/AlGaInP quantum wells grown by solid-source molecular beam epitaxy

2. Defect study of GaInP/GaAs based heterojunction bipolar transistor emitter layer

3. Defects in organometallic vapor‐phase epitaxy‐grown GaInP layers

4. Z. C. Huang, Bing Yang, H. K. Chen, J. C. Chen, in: S. Ashok, J. Chevallier, I. Akasaki, N. M. Johnson, B. L. Sopori (Eds.), Materials Research Society. Symposium Proceedings 378 (1995) 189.

5. Electrical and structural properties of Ga0.51In0.49P/GaAs heterojunctions grown by metalorganic vapor‐phase epitaxy

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4. Avoidance of surface-related defects in MOVPE-grown InGaP layers;Journal of Crystal Growth;2006-01