Improving the performance of GaInP solar cells through rapid thermal annealing and delta doping
Author:
Publisher
Elsevier BV
Subject
Surfaces, Coatings and Films,Renewable Energy, Sustainability and the Environment,Electronic, Optical and Magnetic Materials
Reference53 articles.
1. Solar cell efficiency tables (version 56)
2. High-efficiency GaInP∕GaAs∕InGaAs triple-junction solar cells grown inverted with a metamorphic bottom junction
3. Development of InGaP/GaAs/InGaAs inverted triple junction concentrator solar cells
4. Direct Growth of a GaInP/GaAs/Si Triple‐Junction Solar Cell with 22.3% AM1.5g Efficiency
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1. Metamorphic and Lattice-Matched GaInP Rear-Heterojunction Solar Cells for Improved Performance at Elevated Temperatures;IEEE Journal of Photovoltaics;2024-07
2. Effect of Threading Dislocations on GaInP Front- and Rear-Junction Solar Cells Grown on Si;IEEE Journal of Photovoltaics;2024-07
3. Structure-property relationships and DFT studies of three quaternary chalcogenides: BaCeCuSe3, BaCeAgS3, and BaCeAgSe3;Materials Research Bulletin;2023-12
4. Abrupt Te doping of GaInP grown by molecular beam epitaxy for solar cell applications;Journal of Applied Physics;2023-08-08
5. Metamorphic front- and rear-junction 1.7 eV GaInP solar cells with high open-circuit voltage;Solar Energy Materials and Solar Cells;2023-08
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