Recombination activity of contaminated dislocations in silicon: A model describing electron-beam-induced current contrast behavior
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.63.115208/fulltext
Reference47 articles.
1. Transient ion-drift-induced capacitance signals in semiconductors
2. Impact of the electronic structure on the solubility and diffusion of 3dtransition elements in silicon
3. Influence of copper contamination on recombination activity of misfit dislocations in SiGe/Si epilayers: Temperature dependence of activity as a marker characterizing the contamination level
4. Influence of hydrogen on the electrical and optical activity of misfit dislocations in Si/SiGe epilayers
5. Two classes of defect recombination behaviour in silicon as studied by SEM-EBIC
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