Recombination activity of contaminated dislocations in silicon: A model describing electron-beam-induced current contrast behavior
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.63.115208/fulltext
Reference47 articles.
1. Transient ion-drift-induced capacitance signals in semiconductors
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3. Influence of copper contamination on recombination activity of misfit dislocations in SiGe/Si epilayers: Temperature dependence of activity as a marker characterizing the contamination level
4. Influence of hydrogen on the electrical and optical activity of misfit dislocations in Si/SiGe epilayers
5. Two classes of defect recombination behaviour in silicon as studied by SEM-EBIC
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