Influence of copper contamination on recombination activity of misfit dislocations in SiGe/Si epilayers: Temperature dependence of activity as a marker characterizing the contamination level-Reference-Cited by-同舟云学术

Influence of copper contamination on recombination activity of misfit dislocations in SiGe/Si epilayers: Temperature dependence of activity as a marker characterizing the contamination level

Published:1995-10 Issue:7 Volume:78 Page:4573-4583
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Kittler M.,Ulhaq‐Bouillet C.,Higgs V.

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.359802

Reference42 articles.

1. What information on extended defects do we obtain from beam-injection methods?

2. Difference of the electrical properties of screw and 60° dislocations in silicon as detected with temperature‐dependent electron beam induced current technique

3. Recombination at clean and decorated misfit dislocations

4. Two classes of recombination behavior as studied by the technique of the electron beam induced current: NiSi2particles and misfit dislocations in Ni contaminatedn‐type silicon

5. Two classes of defect recombination behaviour in silicon as studied by SEM-EBIC

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