Spectroscopic studies of the mechanism for hydrogen-induced exfoliation of InP-Reference-Cited by-同舟云学术

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Spectroscopic studies of the mechanism for hydrogen-induced exfoliation of InP

Published:2005-08-24 Issue:8 Volume:72 Page:
ISSN:1098-0121
Container-title:Physical Review B
language:en
Short-container-title:Phys. Rev. B

Author:

Fontcuberta i Morral A.,Zahler J. M.,Griggs M. J.,Atwater Harry A.,Chabal Y. J.

Publisher

American Physical Society (APS)

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.72.085219/fulltext

Reference29 articles.

1. Universal alignment of hydrogen levels in semiconductors, insulators and solutions

2. Silicon on insulator material technology

3. Silicon on insulator material technology

4. Ge layer transfer to Si for photovoltaic applications

5. SEMICONDUCTOR WAFER BONDING

Cited by 25 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Blister formation in He-H co-implanted InP: A comprehensive atomistic study;Applied Surface Science;2021-06

2. Reduction Behavior of Cubic In2O3 Nanoparticles by Combined Multiple In Situ Spectroscopy and DFT;The Journal of Physical Chemistry Letters;2021-04-12

3. Efficient ion-slicing of InP thin film for Si-based hetero-integration;Nanotechnology;2018-10-10

4. Effect of Titanium Doping of Al(111) Surfaces on Alane Formation, Mobility, and Desorption;The Journal of Physical Chemistry C;2011-08-25

5. Ion-Cut Transfer of InP-Based High Electron Mobility Transistors;Journal of The Electrochemical Society;2011-05-17

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