Efficient ion-slicing of InP thin film for Si-based hetero-integration-Reference-Cited by-同舟云学术

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Efficient ion-slicing of InP thin film for Si-based hetero-integration

Published:2018-10-10 Issue:50 Volume:29 Page:504002
ISSN:0957-4484
Container-title:Nanotechnology
language:
Short-container-title:Nanotechnology

Author:

Lin Jiajie,You Tiangui^ORCID,Wang Mao,Huang Kai,Zhang Shibin,Jia Qi,Zhou Min,Yu Wenjie,Zhou Shengqiang,Wang Xi,Ou Xin

Funder

PuJiang Talent Program of Shanghai

International Collaboration Project of Shanghai

National Natural Science Foundation of China

One Hundred Talent Program of CAS

Frontier Science Key Program of CAS

Publisher

IOP Publishing

Subject

Electrical and Electronic Engineering,Mechanical Engineering,Mechanics of Materials,General Materials Science,General Chemistry,Bioengineering

Link

http://iopscience.iop.org/article/10.1088/1361-6528/aae281/pdf

Reference30 articles.

1. Evaluation of InP-to-silicon heterobonding

2. Transfer of InP epilayers by wafer bonding

3. InP nanocrystals on silicon for optoelectronic applications

4. Indium phosphide on silicon heteroepitaxy: Lattice deformation and strain relaxation

5. Effect of InGaAs/InP strained layer superlattice in InP-on-Si

Cited by 30 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. H+ implantation induced defects distribution in 4H-SiC single crystal film fabricated by Crystal-Ion-Slicing and its effects on electrical behavior: A multiple characterization study;Applied Surface Science;2024-10

2. Investigating the physical mechanism of ion-slicing in AlN and hetero-integrating AlN thin film on Si(100) substrate;Materials Science in Semiconductor Processing;2024-06

3. 2.1 µm multi-quantum well laser epitaxially grown on on-axis (001) InP/SiO₂/Si substrate fabricated by ion-slicing;Optics Express;2024-05-14

4. Elucidating the formation mechanisms of the parasitic channel with buffer-free GaN/Si hetero-bonding structures;Applied Physics Letters;2024-05-06

5. The evolution of H+ implantation induced defects and the different cleavage behaviors under different thermal excitation in 4H-SiC during Crystal-Ion-Slicing technology;Applied Surface Science;2024-04

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