Funder
National Natural Science Foundation of China
Reference34 articles.
1. New SiC on insulator wafers based on the Smart-Cut (R) approach and their potential applications;Joly;Nato Sci Ser Ii Math,2002
2. F. Templier, N. Daval, L. Di Cioccio, D. Bourgeat, F. Letertre, D. Planson, J.P. Chante, T. Billon, A new process for the fabrication of SiC power devices and systems on SiCOI (Silicon Carbide On Insulator) substrates, Mater Res Soc Symp P, 742 (2003) 393-398. 10.1557/PROC-742-K7.9.
3. SiC Power Devices on QUASIC and SiCOI Smart-Cut® Substrates: First Demonstrations;Letertre;Mater. Sci. Forum,2003
4. C.H. Wu, S. Stefanescu, H.L. Kuo, C.A. Zorman, M. Mehregany, Fabrication and testing of single crystalline 3C-SiC piezoresistive pressure sensors, Transducers '01: Eurosensors Xv, Digest of Technical Papers, 1 and 2 (2001) 514-517.
5. All-SiC Fiber-Optic Sensor Based on Direct Wafer Bonding for High Temperature Pressure Sensing;Liang;Photonic Sens,2022
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