SiC Power Devices on QUASIC and SiCOI Smart-Cut<sup>®</sup> Substrates: First Demonstrations-Reference-Cited by-同舟云学术

SiC Power Devices on QUASIC and SiCOI Smart-Cut^® Substrates: First Demonstrations

Published:2003-09 Issue: Volume:433-436 Page:813-818
ISSN:1662-9752
Container-title:Materials Science Forum
language:
Short-container-title:MSF

Author:

Letertre Fabrice¹,Templier Francois²,Daval N.¹,Bano Edwige³,Planson Dominique⁴,Di Cioccio Lea²,Jalaguier E.²,Bluet Jean Marie⁵,Billon Thierry²,Madar Roland⁶,Chante Jean-Pierre⁷

Affiliation:

1. SOITEC SA

2. LETI-CEA Grenoble (Technologies Avancées)

3. MINATEC

4. Université de Lyon

5. INSA de Lyon - Domaine Scientifique de la Doua

6. UMR CNRS 5628, INP Grenoble-MINATEC

7. INSA Lyon

Publisher

Trans Tech Publications, Ltd.

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Link

https://www.scientific.net/MSF.433-436.813.pdf

Reference6 articles.

1. E. Hugonnard, F. Letertre, L. Di Cioccio, H.J. von Bardeleben, J. L Cantin, T. Ouisse, T. Billon, G. Guillot, Materials Science Forum Vols. 338-342 (2000) pp.715-718.

2. F. Letertre and al. QUASIC Smart-Cut® substrates for high power devices, Materials Science Forum Vols. 289-393 (2002) pp.151-154.

3. Defives D. et al, Barrier Inhomogeneities and electrical characteristics of Ti/4H-SiC Schottky rectifiers, IEEE T-ED, 1999, vol 46, n°3, pp.449-455.

4. E. Arnold, Silicon On Insulator devices for high voltage and power IC applications, The Electrochemical Society proceedings, Semiconductor Wafer Bonding, vol. 93-29, pp.161-175.

5. Ruff Martin, SiC Devices: Physics and Numerical simulation, IEEE T-ED, 1994, Vol 41, N°6, pp.1040-1054.

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