Ge layer transfer to Si for photovoltaic applications-Reference-Cited by-同舟云学术

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Ge layer transfer to Si for photovoltaic applications

Published:2002-02 Issue: Volume:403-404 Page:558-562
ISSN:0040-6090
Container-title:Thin Solid Films
language:en
Short-container-title:Thin Solid Films

Author:

Zahler James M,Ahn Chang-Geun,Zaghi Shahrooz,Atwater Harry A,Chu Charles,Iles Peter

Publisher

Elsevier BV

Subject

Materials Chemistry,Metals and Alloys,Surfaces, Coatings and Films,Surfaces and Interfaces,Electronic, Optical and Magnetic Materials

Reference6 articles.

1. Physics of Semiconductor Devices;Sze,1981

2. Solar cells;Green,1998

3. Physics and chemistry of silicon wafer bonding investigated by infrared absorption spectroscopy

4. Hydrophobic silicon wafer bonding

5. Layer splitting process in hydrogen-implanted Si, Ge, SiC, and diamond substrates

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1. Light metal functionalized two-dimensional siligene for high capacity hydrogen storage: DFT study;International Journal of Hydrogen Energy;2021-08

2. Heteroepitaxial Integration of Single Crystalline Ge(111) layers on Si(111) via PrO2(111) Heterostructures;ECS Transactions;2019-12-18

3. Optimization of Ge substrates for ZnO deposition and their application for CO2 detection;Journal of Materials Science: Materials in Electronics;2019-02-22

4. Self-Organized Ge Nanospherical Gate/SiO2/Si0.15Ge0.85–Nanosheet n-FETs Featuring High ON-OFF Drain Current Ratio;IEEE Journal of the Electron Devices Society;2019

5. Heterogeneous integration based on low-temperature bonding for advanced optoelectronic devices;Japanese Journal of Applied Physics;2018-03-05

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