Hole-state reversal and the role of residual strain in (In,Ga)As-GaAs superlattices
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.43.12393/fulltext
Reference32 articles.
1. Optical investigation of a new type of valence-band configuration inInxGa1−xAs-GaAs strained superlattices
2. Dependence of critical layer thickness on strain for InxGa1−xAs/GaAs strained‐layer superlattices
3. Variation of the critical layer thickness with In content in strained InxGa1−xAs‐GaAs quantum wells grown by molecular beam epitaxy
4. Photoluminescence in strained InGaAs‐GaAs heterostructures
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1. Role of relative tilt on the structural properties of GaInSb epitaxial layers grown on (001) GaSb substrates;Journal of Applied Physics;1999-07-15
2. Optical measurements of electronic band structure in tensile strain (Ga,In)P-(Al,Ga,In)P quantum wells;Physical Review B;1995-06-15
3. Internal strain and dislocations in Ga1−xAs crystals grown by liquid phase epitaxy/electroepitaxy;Journal of Electronic Materials;1995-03
4. Band‐offset determination for GaInP‐AlGaInP structures with compressively strained quantum well active layers;Applied Physics Letters;1994-02-14
5. Determining the lattice relaxation in semiconductor layer systems by x‐ray diffraction;Journal of Applied Physics;1993-09
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