Optical measurements of electronic band structure in tensile strain (Ga,In)P-(Al,Ga,In)P quantum wells-Reference-Cited by-同舟云学术

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Optical measurements of electronic band structure in tensile strain (Ga,In)P-(Al,Ga,In)P quantum wells

Published:1995-06-15 Issue:24 Volume:51 Page:17660-17666
ISSN:0163-1829
Container-title:Physical Review B
language:en
Short-container-title:Phys. Rev. B

Author:

Dawson Martin D.,Duggan Geoffrey,Arent D. J.

Publisher

American Physical Society (APS)

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.51.17660/fulltext

Reference21 articles.

1. Strained Ga/sub x/In/sub 1-x/P/(AlGa)/sub 0.5/In/sub 0.5/P heterostructures and quantum-well laser diodes

2. Band-structure engineering for low-threshold high-efficiency semiconductor lasers

3. Improved performance due to suppression of spontaneous emission in tensile-strain semiconductor lasers

4. Band lineups and deformation potentials in the model-solid theory

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1. Al$_{\bf 0.52}$In$_{\bf 0.48}$P SAM-APD as a Blue-Green Detector;IEEE Journal of Selected Topics in Quantum Electronics;2014-11

2. MOVPE growth of AlxIn1−xP using tertiarybutylphosphine in pure N2 ambient;Thin Solid Films;2007-03

3. Al-In-P (Aluminium-Indium-Phosphorus);Non-Ferrous Metal Systems. Part 1;2006

4. Al-Ga-P (Aluminium-Gallium-Phosphorus);Non-Ferrous Metal Systems. Part 1;2006

5. Spectroscopic derivative in optical study of GaInAs/InP and GaInP/AlGaInP multip le quantum wells;Acta Physica Sinica;2003

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