Atomic structure of one monolayer of GaAs on Si(111)
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.37.8513/fulltext
Reference18 articles.
1. Interface formation of GaAs with Si(100), Si(111), and Ge(111): Core-level spectroscopy for monolayer coverages of GaAs, Ga, and As
2. Location of atoms in the first monolayer of GaAs on Si
3. Inhomogeneous Electron Gas
4. Self-Consistent Equations Including Exchange and Correlation Effects
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