The self-seeded growth of InAsSb nanowires on silicon by metal-organic vapor phase epitaxy-Reference-Cited by-同舟云学术

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The self-seeded growth of InAsSb nanowires on silicon by metal-organic vapor phase epitaxy

Published:2014-06 Issue: Volume:396 Page:33-37
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Du Wen-Na,Yang Xiao-Guang,Wang Xiao-Ye,Pan Hua-Yong,Ji Hai-Ming,Luo Shuai,Yang Tao,Wang Zhan-Guo

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference32 articles.

1. Diameter-dependent photocurrent in InAsSb nanowire infrared photodetectors;Svensson;Nano Lett.,2013

2. Surface-passivated GaAsP single-nanowire solar cells exceeding 10% efficiency grown on silicon;Holm;Nat. Commun.,2013

3. A double-strip plasmonic waveguide coupled to an electrically driven nanowire LED;No;Nano Lett.,2013

4. Enhanced Sb incorporation in InAsSb nanowires grown by metalorganic vapor phase epitaxy;Borg;Appl. Phys. Lett.,2011

5. Ultrathin-body high-mobility InAsSb-on-insulator field-effect transistors;Fang;IEEE Electron. Dev. L,2012

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1. Composition of III-V ternary materials under arbitrary material fluxes: The general approach unifying kinetics and thermodynamics;Physical Review Materials;2023-07-14

2. Sb‐Mediated Tuning of Growth‐ and Exciton Dynamics in Entirely Catalyst‐Free GaAsSb Nanowires;Small;2023-01-20

3. Large-Composition-Range Pure-Phase Homogeneous InAs_1–xSb_x Nanowires;The Journal of Physical Chemistry Letters;2022-01-12

4. Growth dynamics and compositional structure in periodic InAsSb nanowire arrays on Si (111) grown by selective area molecular beam epitaxy;Nanotechnology;2021-01-08

5. Assembling your nanowire: an overview of composition tuning in ternary III–V nanowires;Nanotechnology;2020-11-24

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