Controlling the polarity of metalorganic vapor phase epitaxy-grown GaP on Si(111) for subsequent III-V nanowire growth-Reference-Cited by-同舟云学术

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Controlling the polarity of metalorganic vapor phase epitaxy-grown GaP on Si(111) for subsequent III-V nanowire growth

Published:2015-06-08 Issue:23 Volume:106 Page:231601
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Paszuk A.¹,Brückner S.¹²,Steidl M.¹^ORCID,Zhao W.¹,Dobrich A.¹,Supplie O.¹²^ORCID,Kleinschmidt P.¹,Prost W.³,Hannappel T.¹²

Affiliation:

1. Technische Universität Ilmenau, Institut für Physik, 98693 Ilmenau, Germany

2. Helmholtz-Zentrum Berlin, Institute for Solar Fuels, 14109 Berlin, Germany

3. Center for Semiconductor Technology and Optoelectronics (ZHO), University of Duisburg-Essen, 47057 Duisburg, Germany

Funder

BMBF

Landesgraduiertenschule

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4922275

Reference41 articles.

1. Wafer bonded four-junction GaInP/GaAs//GaInAsP/GaInAs concentrator solar cells with 44.7% efficiency

2. Semiconductor Nanowire Optical Antenna Solar Absorbers

3. III-V nanowire photovoltaics: Review of design for high efficiency

4. InP Nanowire Array Solar Cells Achieving 13.8% Efficiency by Exceeding the Ray Optics Limit

5. Defect-Free GaAs/AlGaAs Core–Shell Nanowires on Si Substrates

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4. Atomic surface structure of MOVPE-prepared GaP(1 1 1)B;Applied Surface Science;2020-12

5. Nanowire Electronics: From Nanoscale to Macroscale;Chemical Reviews;2019-07-30

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