Tailoring of internal fields in AlGaN/GaN and InGaN/GaN heterostructure devices
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.61.2773/fulltext
Reference19 articles.
1. The Blue Laser Diode
2. GaN based transistors for high power applications
3. Two-dimensional electron gases induced by spontaneous and piezoelectric polarization charges in N- and Ga-face AlGaN/GaN heterostructures
4. Polarization fields determination in AlGaN/GaN heterostructure field-effect transistors from charge control analysis
5. Determination of piezoelectric fields in strained GaInN quantum wells using the quantum-confined Stark effect
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