Binding energies of impurity states in strained wurtzite GaN/Al x Ga 1− x N heterojunctions with finitely thick potential barriers
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy
Link
https://iopscience.iop.org/article/10.1088/1674-1056/23/6/066801/pdf
Reference50 articles.
1. High-electron-mobility AlGaN∕AlN∕GaN heterostructures grown on 100-mm-diam epitaxial AlN/sapphire templates by metalorganic vapor phase epitaxy
2. Carrier density and mobility modifications of the two-dimensional electron gas due to an embedded AlN potential barrier layer in AlxGa1−xN∕GaN heterostructures
3. An optically pumped GaN/AlGaN quantum well intersubband terahertz laser
4. Enhancement of terahertz coupling efficiency by improved antenna design in GaN/AlGaN high electron mobility transistor detectors
5. Characterization of Al 2 O 3 /GaN/AlGaN/GaN metal—insulator—semiconductor high electron mobility transistors with different gate recess depths
Cited by 3 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. The Effects on Electric Field and Hydrostatic Pressure on the Doped Properties in a Strained (In,Ga)N-GaN Coupled Quantum Wells;Journal of Nanoelectronics and Optoelectronics;2021-01-01
2. External electric field effect on the binding energy of a hydrogenic donor impurity in InGaAsP/InP concentric double quantum rings;International Journal of Modern Physics B;2018-04-16
3. Barrier Thickness and Hydrostatic Pressure Effects on Hydrogenic Impurity States in Wurtzite GaN/AlxGa1−xN Strained Quantum Dots;Journal of Nanomaterials;2015
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