Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference43 articles.
1. Comparison of 6H-SiC, 3C-SiC, and Si for power devices
2. Shur, M. and Khan, A., in High Temperature Electronics, ed. M. Willander and H. L. Hartnagel, pp. 297–321. Chapman and Hall, London, 1996
3. AlGaN/GaN HEMTs grown on SiC substrates
4. High-temperature performance of AlGaN/GaN HFETs on SiC substrates
5. Thibeault, B.J., Keller, B.P., Wu, Y.-F., Fini, P., Mishra, U.K., Nguyen, C., Nguyen, N.X. and Le, M., High performance and large area flip-chip bonded AlGaN/GaN MODFET. IEDM-97 Technical Digest, IEEE, December 1997
Cited by
238 articles.
订阅此论文施引文献
订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献