Vertical coupling and transition energies in multilayerInAs/GaAsquantum-dot structures
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.62.10220/fulltext
Reference23 articles.
1. Vertically stacked quantum dots grown by ALMBE and MBE
2. Energy relaxation by multiphonon processes in InAs/GaAs quantum dots
3. Vertically Aligned and Electronically Coupled Growth Induced InAs Islands in GaAs
4. Surface segregation of In atoms during molecular beam epitaxy and its influence on the energy levels in InGaAs/GaAs quantum wells
5. Controlled tuning of the radiative lifetime in InAs self-assembled quantum dots through vertical ordering
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