Vertically Aligned and Electronically Coupled Growth Induced InAs Islands in GaAs
Author:
Publisher
American Physical Society (APS)
Subject
General Physics and Astronomy
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevLett.76.952/fulltext
Reference16 articles.
1. Dislocation-free Stranski-Krastanow growth of Ge on Si(100)
2. Elastic Energies of Coherent Germanium Islands on Silicon
3. Morphological instability in epitaxially strained dislocation-free solid films
4. Direct formation of quantum‐sized dots from uniform coherent islands of InGaAs on GaAs surfaces
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