Optimization of dot layer periodicity through analysis of strain and electronic profile in vertically stacked InAs/GaAs Quantum dot heterostructure-Reference-Cited by-同舟云学术

Optimization of dot layer periodicity through analysis of strain and electronic profile in vertically stacked InAs/GaAs Quantum dot heterostructure

Published:2018-03 Issue: Volume:736 Page:216-224
ISSN:0925-8388
Container-title:Journal of Alloys and Compounds
language:en
Short-container-title:Journal of Alloys and Compounds

Author:

Panda Debiprasad^ORCID,Saha Jhuma,Balgarkashi Akshay,Shetty Saikalash,Rawool Harshal,Singh Sandeep Madhusudan,Upadhyay Saurabh,Tongbram Binita,Chakrabarti Subhananda^ORCID

Funder

DST Nanomisson

SERB-DST

Indian Space Research Organisation

Publisher

Elsevier BV

Subject

Materials Chemistry,Metals and Alloys,Mechanical Engineering,Mechanics of Materials

Reference32 articles.

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4. InAs/GaAs quantum dot solar cell with an AlAs cap layer;Tutu;Appl. Phys. Lett.,2013

5. Strong normal-incidence infrared absorption in self-organized InAs/InAlAs quantum dots grown on InP(001);Weber;Appl. Phys. Lett.,1999

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