InAs/GaAs quantum dot solar cell with an AlAs cap layer
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4803459
Reference23 articles.
1. Detailed Balance Limit of Efficiency of p‐n Junction Solar Cells
2. Current-matched triple-junction solar cell reaching 41.1% conversion efficiency under concentrated sunlight
3. Efficiency of hot‐carrier solar energy converters
4. Increasing the Efficiency of Ideal Solar Cells by Photon Induced Transitions at Intermediate Levels
5. High-efficiency InAs/GaAs quantum dot solar cells by metalorganic chemical vapor deposition
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3. Impact of linear alloy on strain coupled bilayer InAs/GaAs1-ySby quantum dot heterostructures;Physics and Simulation of Optoelectronic Devices XXXI;2023-03-10
4. InAs quantum dot-in-a-well heterostructures with InGaAs, GaAsN and GaAsSb well using digital alloy capping layer;Current Applied Physics;2023-03
5. Theoretical Study on Vertically Coupled Stranski-Krastanov (SK) on Sub Monolayer (SML) InAs Quantum Dot Heterostructures Employing Ternary and Quaternary Barrier Materials;IEEE Transactions on Nanotechnology;2023
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