A low temperature investigation of the optical properties of coupled InAs quantum dots with GaAsN/GaAs spacers-Reference-Cited by-同舟云学术

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A low temperature investigation of the optical properties of coupled InAs quantum dots with GaAsN/GaAs spacers

Published:2017-02-20 Issue: Volume: Page:
ISSN:0277-786X
Container-title:SPIE Proceedings
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Author:

Balgarkashi Akshay¹,Biswas Mahitosh¹,Singh Sandeep¹,Das Debabrata¹,Bhatnagar Anuj²,Makkar Roshan²,Shinde Nilesh²,Chakrabarti Subhananda¹

Affiliation:

1. Indian Institute of Technology Bombay (India)

2. Society for Applied Microwave Electronics Engineering and Research (India)

Publisher

SPIE

Reference11 articles.

1. Vertical self-alignment of quantum dots in superlattice

2. Strain-interactions between InAs/GaAs quantum dot layers

3. Effects of strain and confinement on the emission wavelength of InAs quantum dots due to aGaAs1−xNxcapping layer

4. Incorporation of nitrogen in nitride-arsenides: Origin of improved luminescence efficiency after anneal

5. Effects of rapid thermal annealing on device characteristics of InGaAs∕GaAs quantum dot infrared photodetectors

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