Effects of rapid thermal annealing on device characteristics of InGaAs∕GaAs quantum dot infrared photodetectors
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2202704
Reference26 articles.
1. Nano-Optoelectronics
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3. Normal-incidence, high-temperature, mid-infrared, InAs-GaAs vertical quantum-dot infrared photodetector
4. Wavelength shifting in GaAs quantum well lasers by proton irradiation
5. Proton irradiation-induced intermixing in InGaAs/(Al)GaAs quantum wells and quantum-well lasers
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