Proton irradiation-induced intermixing in InGaAs/(Al)GaAs quantum wells and quantum-well lasers
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.370291
Reference19 articles.
1. Atom diffusion and impurity‐induced layer disordering in quantum well III‐V semiconductor heterostructures
2. Disorder of an AlAs‐GaAs superlattice by impurity diffusion
3. Laser beam heating and transformation of a GaAs‐AlAs multiple‐quantum‐well structure
4. Stripe‐geometry quantum well heterostructure AlxGa1−xAs‐GaAs lasers defined by defect diffusion
5. Anodic-oxide-induced interdiffusion in GaAs/AlGaAs quantum wells
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1. Independent Tuning of Exciton and Photon Energies in an Exciton–Polariton Condensate by Proton Implantation‐Induced Interdiffusion;Advanced Optical Materials;2022-11-14
2. InGaAs/GaAs(P) quantum well intermixing induced by Si impurity diffusion;Chinese Optics;2022
3. Changes of photoluminescence of electron beam irradiated self-assembled InAs/GaAs quantum dots;Young Scientists Forum 2017;2018-03-05
4. Proton radiation effect on GaAs/AlGaAs core–shell ensemble nanowires photo-detector;Chinese Physics B;2017-08
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